PART |
Description |
Maker |
GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM 10ns 256K x 16 4Mb asynchronous SRAM 12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
GS74117AX-12 GS74117AX-8 GS74117AX-7I GS74117AX-10 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 8 ns, PBGA48 256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48 256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 10 ns, PBGA48
|
SRAM GSI Technology, Inc.
|
N04L63W2AB27I N04L63W2AB27IT N04L63W2AT27I N04L63W |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
|
ON Semiconductor
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM GSI Technology, Inc.
|
GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器 256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC Electronic Theatre Controls, Inc.
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|
N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM From old datasheet system
|
List of Unclassifed Manufacturers ETC[ETC]
|
GS840F18AT-8.5 |
8.5ns 256K x 18 4Mb sync burst SRAM
|
GSI Technology
|
MCM6343 MCM6343TS12 MCM6343TS15 MCM6343YJ12 MCM634 |
256K x 15 Bit 3.3 V Asynchronous Fast Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 15 Bit 3.3 V Asynchronous Fast Static RAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|